类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 关断时间-最大值(toff) | 接通时间-最大值(ton) | 最小击穿电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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BSL308PEH6327XTSA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 15.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | 活跃 | 1 (Unlimited) | 6 | 500mW | 鸥翼 | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 5.6 ns | 2 P-Channel (Dual) | 80m Ω @ 2A, 10V | 1V @ 11μA | 无卤素 | 500pF @ 15V | 5nC @ 10V | 7.7ns | 30V | 2.8 ns | 2A | 20V | -30V | 2A | 0.08Ohm | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | 18 pF | 1mm | 2.9mm | 1.6mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSS138DW-7-F | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SOT-363 | 6.010099mg | 200mA | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | 活跃 | 1 (Unlimited) | 6 | 3.5Ohm | 150°C | -55°C | 50V | 200mW | 200mA | 2 | Dual | 200mW | 20 ns | 200mW | 2 N-Channel (Dual) | 3.5Ohm @ 220mA, 10V | 1.5V @ 250μA | 50pF @ 10V | 50V | 200mA | 1.2V | 20V | 75V | 50pF | 150°C | 逻辑电平门 | 3.5Ohm | 3.5 Ω | 1.2 V | 50V | 1.1mm | 2.2mm | 1.35mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
FDS3992 | ON Semiconductor | 数据表 | 2109 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 28 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 62MOhm | Tin (Sn) | 100V | 2.5W | 鸥翼 | 4.5A | Dual | 增强型MOSFET | 2.5W | 8 ns | 2 N-Channel (Dual) | SWITCHING | 62m Ω @ 4.5A, 10V | 4V @ 250μA | 750pF @ 25V | 15nC @ 10V | 23ns | 26 ns | 4.5A | 4V | 20V | 100V | 100V | 167 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 4 V | 1.575mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | BSD840NH6327XTSA1 | Infineon Technologies | 数据表 | 8797 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 7.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 500mW | 鸥翼 | 未说明 | 未说明 | BSD840 | 6 | 2 | 增强型MOSFET | 500mW | 1.9 ns | 2 N-Channel (Dual) | 400m Ω @ 880mA, 2.5V | 750mV @ 1.6μA | 无卤素 | 78pF @ 10V | 0.26nC @ 2.5V | 2.2ns | 880mA | 550mV | 8V | 20V | 3.5A | 0.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1mm | 2mm | 1.25mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | DMG1016UDW-7 | Diodes Incorporated | 数据表 | 2113 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 1.07A 845mA | 2 | 26.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 750mOhm | HIGH RELIABILITY | 330mW | DUAL | 鸥翼 | DMG1016UDW | 6 | 增强型MOSFET | 330mW | 5.1 ns | N and P-Channel | SWITCHING | 450m Ω @ 600mA, 4.5V | 1V @ 250μA | 60.67pF @ 10V | 0.74nC @ 4.5V | 7.4ns | N-CHANNEL AND P-CHANNEL | 12.3 ns | -845mA | 1V | 6V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
NTJD4158CT1G | ON Semiconductor | 数据表 | 30000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 250mA 880mA | 2 | 13.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.5Ohm | Tin (Sn) | 270mW | 鸥翼 | 260 | 250mA | 40 | NTJD4158C | 6 | Dual | 增强型MOSFET | 270mW | 15 ns | N and P-Channel | SWITCHING | 1.5 Ω @ 10mA, 4.5V | 1.5V @ 100μA | 33pF @ 5V | 1.5nC @ 5V | 6.5ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 3.5 ns | 880mA | 1.2V | 12V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | FDG6316P | ON Semiconductor | 数据表 | 148556 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 700mA | 2 | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 270MOhm | -12V | 300mW | 鸥翼 | -700mA | Dual | 增强型MOSFET | 300mW | 5 ns | 2 P-Channel (Dual) | SWITCHING | 270m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 146pF @ 6V | 2.4nC @ 4.5V | 13ns | 12V | 13 ns | -700mA | -600mV | 8V | 0.7A | -12V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
FDS8949 | ON Semiconductor | 数据表 | 1758 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 23 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 29mOhm | 40V | 2W | 鸥翼 | 6A | Dual | 增强型MOSFET | 2W | 9 ns | 2 N-Channel (Dual) | 29m Ω @ 6A, 10V | 3V @ 250μA | 955pF @ 20V | 11nC @ 5V | 5ns | 3 ns | 6A | 1.9V | 20V | 6A | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7904TRPBF | Infineon Technologies | 数据表 | 15 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 7.6A 11A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 16.2MOhm | 2W | 鸥翼 | IRF7904PBF | Dual | 增强型MOSFET | 2W | 1.4W 2W | 2 N-Channel (Dual) | 16.2m Ω @ 7.6A, 10V | 2.25V @ 25μA | 910pF @ 15V | 11nC @ 4.5V | 11A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN5L06DWK-7 | Diodes Incorporated | 数据表 | 202588 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | 14.4 ns | -65°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2Ohm | Matte Tin (Sn) | HIGH RELIABILITY | 50V | 250mW | 鸥翼 | 260 | 305mA | 40 | DMN5L06DWK | 6 | Dual | 增强型MOSFET | 250mW | 2.1 ns | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 50mA, 5V | 1V @ 250μA | 50pF @ 25V | 305mA | 1V | 20V | 0.305A | 50V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 5 pF | 1.1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
FDS6982AS | ON Semiconductor | 数据表 | 330 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6.3A 8.6A | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench®, SyncFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 28MOhm | 30V | 2W | 鸥翼 | 8.6A | 2 | 增强型MOSFET | 2W | 12 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 28m Ω @ 6.3A, 10V | 3V @ 250μA | 610pF @ 10V | 15nC @ 10V | 7ns | 3 ns | 8.6A | 1.9V | 20V | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 19 ns | 150°C | 逻辑电平门 | 1.4 V | 64ns | 34ns | 1.75mm | 5mm | 3.99mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | IRF7317TRPBF | Infineon Technologies | 数据表 | 177 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 6.6A 5.3A | 2 | 42 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29mOhm | Matte Tin (Sn) | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2W | DUAL | 鸥翼 | 6.6A | IRF7317PBF | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 900pF @ 15V | 27nC @ 4.5V | 40ns | N-CHANNEL AND P-CHANNEL | 49 ns | 6.6A | 700mV | 12V | 20V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
FDS9934C | ON Semiconductor | 数据表 | 494220 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 5 hours ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6.5A 5A | 2 | 25 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 30MOhm | Tin (Sn) | 2W | DUAL | 鸥翼 | 6.5A | 增强型MOSFET | 2W | 16 ns | 900mW | N and P-Channel | SWITCHING | 30m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 650pF @ 10V | 9nC @ 4.5V | 9ns | N-CHANNEL AND P-CHANNEL | 9 ns | 6.5A | 1V | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.575mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF8313TRPBF | Infineon Technologies | 数据表 | 995 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 8.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 15.5MOhm | Matte Tin (Sn) | 2W | 鸥翼 | IRF8313PBF | Dual | 增强型MOSFET | 2W | 8.3 ns | 2 N-Channel (Dual) | SWITCHING | 15.5m Ω @ 9.7A, 10V | 2.35V @ 25μA | 760pF @ 15V | 9nC @ 4.5V | 9.9ns | 30V | 4.2 ns | 9.7A | 1.8V | 20V | 30V | 46 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS4DNF60L | STMicroelectronics | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.535924g | SILICON | 2 | 45 ns | -55°C~150°C TJ | Cut Tape (CT) | STripFET™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 55mOhm | Matte Tin (Sn) | 低阈值 | 60V | 2W | 鸥翼 | 260 | 4A | 30 | STS4D | 8 | 不合格 | 增强型MOSFET | 2W | 15 ns | 2 N-Channel (Dual) | SWITCHING | 55m Ω @ 2A, 10V | 2.5V @ 250μA | 1030pF @ 25V | 15nC @ 4.5V | 28ns | 10 ns | 4A | 1.7V | 15V | 4A | 60V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.25mm | 5mm | 4.05mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | STS2DNF30L | STMicroelectronics | 数据表 | 7500 In Stock | - | 最小起订量: 1 最小包装量: 1 | NRND (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.535924g | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | 不用于新设计 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 30V | 2W | 鸥翼 | 260 | 3A | 30 | STS2D | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 19 ns | 2 N-Channel (Dual) | SWITCHING | 110m Ω @ 1A, 10V | 2.5V @ 250μA | 121pF @ 25V | 4.5nC @ 10V | 20ns | 8 ns | 3A | 1.7V | 18V | 3A | 0.15Ohm | 30V | 9A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 6.35mm | 50.8mm | 6.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF7105TRPBF | Infineon Technologies | 数据表 | 20 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.5A 2.3A | 2 | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100mOhm | Matte Tin (Sn) | 超低电阻 | 2W | DUAL | 鸥翼 | 3.5A | IRF7105PBF | 2 | 增强型MOSFET | 2W | 7 ns | N and P-Channel | SWITCHING | 100m Ω @ 1A, 10V | 3V @ 250μA | 330pF @ 15V | 27nC @ 10V | 13ns | N-CHANNEL AND P-CHANNEL | 37 ns | 3.5A | 1V | 20V | 25V | 14A | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 3 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | IRF9910TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 10A 12A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 13.4MOhm | Matte Tin (Sn) | 20V | 2W | 鸥翼 | 10A | IRF9910PBF | Dual | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 9.3m Ω @ 12A, 10V | 2.55V @ 250μA | 900pF @ 10V | 11nC @ 4.5V | 10A | 20V | 20V | 33 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.55 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
BSL215CH6327XTSA1 | Infineon Technologies | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 雪崩 额定 | 500mW | DUAL | 鸥翼 | 2 | 增强型MOSFET | 500mW | N and P-Channel Complementary | SWITCHING | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 无卤素 | 143pF @ 10V | 0.73nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 1.5A | -900μV | 12V | -20V | 0.14Ohm | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 9 pF | 1.1mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7331PBF | Infineon Technologies | 数据表 | 11521 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 7A | 2 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 鸥翼 | 未说明 | 未说明 | IRF7331PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 30m Ω @ 7A, 4.5V | 1.2V @ 250μA | 1340pF @ 16V | 20nC @ 4.5V | 20V | MS-012AA | 7A | 0.03Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N06S4L26ATMA1 | Infineon Technologies | 数据表 | 4029 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 18 ns | -55°C~175°C TJ | Cut Tape (CT) | 2010 | OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 33W | FLAT | 未说明 | not_compliant | 未说明 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 5 ns | 33W | 2 N-Channel (Dual) | 26m Ω @ 17A, 10V | 2.2V @ 10μA | 无卤素 | 1430pF @ 25V | 20nC @ 10V | 1.5ns | 10 ns | 20A | 16V | 60V | 0.026Ohm | 35 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
NTGD4167CT1G | ON Semiconductor | 数据表 | 1455 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | YES | 6 | SILICON | 2.6A 1.9A | 2 | 22 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 90MOhm | Tin (Sn) | 900mW | 鸥翼 | NTGD4167C | 6 | Dual | 增强型MOSFET | 1.1W | 8 ns | N and P-Channel | SWITCHING | 90m Ω @ 2.6A, 4.5V | 1.5V @ 250μA | 295pF @ 15V | 5.5nC @ 4.5V | 8ns | N-CHANNEL AND P-CHANNEL | 8 ns | 2.6A | 900mV | 12V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 3.1mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6321C | ON Semiconductor | 数据表 | 6000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 500mA 410mA | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 450mOhm | 逻辑电平兼容 | 300mW | 鸥翼 | 500mA | Dual | 增强型MOSFET | 300mW | N and P-Channel | SWITCHING | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 50pF @ 10V | 2.3nC @ 4.5V | 8ns | N-CHANNEL AND P-CHANNEL | 8 ns | 500mA | 800mV | 8V | 0.5A | 25V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6304P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 410mA | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 1.1Ohm | 逻辑电平兼容 | -25V | 300mW | 鸥翼 | -410mA | Dual | 增强型MOSFET | 300mW | 7 ns | 2 P-Channel (Dual) | SWITCHING | 1.1 Ω @ 410mA, 4.5V | 1.5V @ 250μA | 62pF @ 10V | 1.5nC @ 4.5V | 8ns | 25V | 8 ns | -410mA | -820mV | -8V | 0.41A | -25V | -25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -820 mV | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
NTJD4001NT1G | ON Semiconductor | 数据表 | 38548 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 22 hours ago) | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 94 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1Ohm | 30V | 272mW | 鸥翼 | 260 | 250mA | 40 | 6 | Dual | 增强型MOSFET | 272mW | 17 ns | 2 N-Channel (Dual) | SWITCHING | 1.5 Ω @ 10mA, 4V | 1.5V @ 100μA | 33pF @ 5V | 1.3nC @ 5V | 23ns | 23 ns | 250mA | 1.2V | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.2 V | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
